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| DSEC 60-02AQ HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data VRSM V 200 VRRM V 200 DSEC 60-02AQ Type A C A IFAV = 2x30 A VRRM = 200 V trr = 25 ns TO-3 P C (TAB) A C A A = Anode, C = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md FC Weight Conditions TC = 145C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 325 1.2 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm N g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C mounting torque mounting force with clip typical 165 0.8...1.2 20...120 6 Symbol IR Conditions VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 150C IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 10 200 0.95 1.20 0.9 0.25 A A V V K/W K/W ns 4 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s; TVJ = 100C 25 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-1 420 |
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